王德君，电信学部控制科学与工程学院教授，博士生导师。

吉林大学半导体专业本科、硕士，清华大学材料学博士，先后服务于北京大学、名古屋大学和奈良先端科学技术大学院大学，现开云平台首页 教授，博士生导师。

研究方向:

1. SiC MOSFET可靠性技术及装备；

2. SiC半导体缺陷物理学；

3. AI芯片底层器件/集成电路技术

课题组重视学术交流和对外合作，近年指导研究生解决核心关键技术及理论问题多项，在国际顶级学术期刊发表学术论文数十篇，培养的研究生多次获得博士生优秀论文单项奖学金和国家优秀学生奖学金，深受业界欢迎。

Publications

[35] 谢威威 等. Applied Surface Science, 680: 161291 (2025).

[34] 白...娇 等. Annealed HfOx-RRAM, Physica Status Solidi (a), 221: 2300937 (2024).

[33] 白...娇 等. Y-doped HfOx-RRAM. Nanotechnology, 34: 235703 (2023).

[32] 白...娇 等. Conduction mechanism and impedance analysis of HfOx-RRAM. Applied Surface Science, 600: 154084 (2022).

[31] 尉升升 等. Reliability and stability improvement via plasma pretreatment. ACS Applied Materials & Interfaces, 15(14): 18537–18549 (2023). 

[30] 尉升升 等. Initial oxidation of the 4H-SiC (0001) surface. Applied Surface Science, 614: 156161 (2023). 

[29] 尉升升 等. Carbon-related point defects on SiC surface. Applied Surface Science, 582: 152461 (2022). 

[28] 尹志鹏 等. Ozone re-oxidation & BTI. Chinese Physics B, 31(11): 117302 (2022).

[27] 尹志鹏 等. Ozone re-oxidation annealing. Ceramics International, 48(8): 10874-10884 (2022). 

[26] 尹志鹏 等. Reoxidation, defects and stability. Applied Surface Science, 531: 147312 (2020).

[26] 杨...超 等. (Topical Review) BTI in SiC MOS devices. J. Phys.D: Appl. Phys., 54: 123002 (2021).

[25] 杨...超 等. Synergistic effects of nitrogen and oxygen. Applied Surface Science, 513: 145837 (2020).

[24] 杨...超 等. Bias temperature instability. Applied Surface Science, 488: 293-302 (2019).

[23] 杨...超 等. Interfacial traps and mobile ions. JPD:AP, 52: 405103 (2019).

[23] 蔡承轩 等. Si-doped Ta2O5 RRAM. Applied Surface Science, 560: 149960 (2021).

[22] 张方龙 等. Carrier capture and emission properties. Applied Surface Science, 514: 145889 (2020).

[21] 孙雨浓 等. N/N-H Passivation of SiO2/SiC interface traps & BTI. JAP, 125: 185703 (2019).

[20] 张轶杰 等. DFT Passivation of SiO2/SiC interface traps. Chin. Phys. B, 27: 047103 (2018). 

[19] 王俊强 等. Cu-Sn bonding in 3D integration.  Applied Surface Science, 403: 525 (2017).

[18] 黄海云 等. A Monolithic CMOS Magnetic Hall Sensor.Sensors, 15: 27359 (2015).

[17] 刘冰冰 等. SiC surface pretreatment combined with POA. Applied Surface Science, 364: 769 (2016).

[16] 刘冰冰 等. TiC/SiC Ohmic contacts. Applied Surface Science, 355: 59-63 (2015).

[15] 刘冰冰 等. Passivation of SiC surface. Applied Physics Letters, 104: 202101 (2014).

[14] 江...滢 等. Devices isolation technology for GaN MOSFETs. Applied Surface Science, 351: 1155 (2015).

[13] 王青鹏 等. Characterization of GaN MOSFETs. IEEE Trans. on Electron Devices, 61: 498 (2014).

[12] 李文波 等. SiO2/SiC Interface defects. Solid State Communications, 205:28–32(2015).

[11] 李文波 等. SiO2/SiC Interface transition layer. AIP Advances, 5: 017122 (2015).

[10] 李文波 等. Oxidation of step edges on SiC surfaces. Applied Physics Letters, 103: 211603 (2013).

[09] 李文波 等. Insight into the Oxidation and defects of SiC. Physical Review B, 87: 085320 (2013).

[08] 黄玲琴 等. Barrier of metal/SiC contacts. Applied Physics Letters, 103: 033520 (2013).

[07] 黄玲琴 等. Ti/SiC Ohmic contacts. Applied Physics Letters, 100: 263503 (2012).

[06] 黄玲琴 等. SiC MS contacts. JJAP, 51: 081302 (2012).

[05] 黄玲琴 等. Plasma cleaning technology for SiC. Applied Surface Science, 257: 10172 (2011).

[04] 朱巧智 等. SiC wet ROA. Journal of Semiconductors. 35: 024002 (2014). 

[03] 朱巧智 等. N-H Passivation of SiO2/SiC interface traps. Applied Physics Letters, 103: 062105 (2013).

[02] 朱巧智 等. N Passivation of SiC MOS interface traps. Physica B - Condensed Matter, 432: 89-95(2014). 

[01] 朱巧智 等. SiO2/SiC interface transition region. Applied Physics Letters, 99: 082102 (2011).

译著：《半导体材料与器件表征技术》，开云平台首页 出版社，2008年6月
原著：《Semiconductor Material and Device Characterization》by Dieter K. Schroder

合作领域：

1. SiC MOS器件栅氧可靠性测试技术及缺陷分析

2. SiC MOS器件栅氧化技术解决方案

3. SiC 半导体器件可靠性制造技术及装备

4. 半导体器件测试技术及仪器