Prof. Dejun WANG received the B.S. and M.S. degree in semiconductors from Jilin University, Changchun, China; and the Ph.D. degree in materials science from Tsinghua University, Beijing, China. He has worked in Peking University, Nagoya University and Nara Institute of Science and Technology. Prof. Wang joined Dalian University of Technology (DUT) in 2004 as a professor in the field of microelectronics. His research interests are semiconductor defect physics, semiconductor SiC & GaN device physics and technology, Si3DP/GSIc technologies, sensor chip, and intelligent electronic safety control. The recent work mainly includes the physics and technology of SiO2/SiC interfaces, metal-SiC contacts, oxidation technology of SiC semiconductor, and the development of GaN power devices. Research Field: 1. Semiconductor Defect Physics; 2. Semiconductor SiC & GaN Device Physics and Technology; 3. Si3DP/GSI Technologies; 4. Sensor Chip, Intelligent electronic safety control eMail: dwang121@dlut.edu.cn Publications [10] 刘冰冰 等. Passivation of SiC surface. Applied Physics Letters, 104: 202101 (2014) [09] 江..滢 等. Field isolation for GaN MOSFETs. Semicond. Sci. & Tech., 29: 055002 (2014) [08] 王青鹏 等. Characterization of GaN MOSFETs. IEEE Trans. on Electron Devices, 61: 498 (2014) [07] 朱巧智 等. Electrical and physical properties of 4H-SiC MOS interface. Physica B, 432: 89 (2014) [06] 李文波 等. Oxidation of step edges on SiC surfaces. Applied Physics Letters, 103: 211603 (2013) [05] 朱巧智 等. Passivation of SiO2/SiC interface traps. Applied Physics Letters, 103: 062105 (2013) [04] 黄玲琴 等. Barrier of metal/SiC contacts. Applied Physics Letters, 103: 033520 (2013) [03] 李文波 等. Insight into the Oxidation and defects of SiC. Physical Review B, 87: 085320 (2013) [02] 黄玲琴 等. SiC Ohmic contacts. Applied Physics Letters, 100: 263503 (2012) [01] 朱巧智 等. SiO2/SiC interface transition region. Applied Physics Letters, 99: 082102 (2011) 译著：《半导体材料与器件表征技术》，开云平台首页 出版社，2008年6月 原著：《Semiconductor Material and Device Characterization》by Dieter K. Schroder